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savantic semiconductor product specification silicon pnp power transistors 2SB656 description with to-3 package high power dissipation applications for use in power amplifier applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -160 v v ceo collector-emitter voltage open base -160 v v ebo emitter-base voltage open collector -5 v i c collector current -12 a i b base current -4 a p c collector power dissipation t c =25 125 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SB656 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma ;i b =0 -160 v v (br)cbo collector-base breakdown voltage i c =-1ma ;i e =0 -160 v v (br)ebo emitter-base breakdown voltage i e =-1ma ;i c =0 -5 v v cesat collector-emitter saturation voltage i c =-10a; i b =-1a -3.0 v i cbo collector cut-off current v cb =-160v; i e =0 -0.1 ma i ebo emitter cut-off current v eb =-5v; i c =0 -0.1 ma h fe dc current gain i c =-1a ; v ce =-5v 60 200 f t transition frequency i c =-1a ; v ce =-10v 20 mhz h fe classifications b c 60-120 100-200
savantic semiconductor product specification 3 silicon pnp power transistors 2SB656 package outline fig.2 outline dimensions (unindicated tolerance:0.1mm)

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